Oxide film formation on aluminium nitride substrates covered with thin aluminium layers |
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Authors: | D A Robinson G Yin R Dieckmann |
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Affiliation: | (1) Department of Materials Science and Engineering, Bard Hall, Cornell University, 14853 Ithaca, NY, USA |
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Abstract: | The growth of oxide films on aluminium nitride substrates covered by vapour-deposited aluminium films of 1.5 and 4 m thickness has been studied in air at atmospheric pressure as a function of temperature. Oxide films were grown by oxidation in air at temperatures between 800 and 1300°C. The kinetics of the growth of oxide films on such substrates was observed to be complex. In particular, there are three subsequent periods of observed oxide growth: (1) an initial period of rapid oxide growth, (2) an incubation period with very slow oxide growth, and (3) a second period of relatively fast oxide growth. |
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