| 低温高速率沉积非晶硅薄膜及太阳电池 |
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| 引用本文： | 倪牮.低温高速率沉积非晶硅薄膜及太阳电池[J].光电子．激光,2010(2):217-221. |
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| 作者姓名： | 倪牮 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所; |
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| 基金项目： | 国家高技术研究发展计划资助项目(2009AA05Z422);;国家“973”计划资助项目(2006CB202602,2006CB202603);;天津市应用基础及前沿技术研究计划(08JCZDJC22200);;天津市国家科技计划配套资助项目(07QTPTJC29500) |
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| 摘 要： | 采用射频等离子体增强化学气相沉积(RF-PECVD)技术,保持沉积温度在125℃制备非晶硅薄膜材料及太阳电池。在85 Pa的低压下以及400～667 Pa的高压下,改变Si H4浓度和辉光功率等沉积参数,对本征a-Si材料的性能进行优化。结果表明,在高压下,合适的Si H4浓度和压力功率比可以使a-Si材料的光电特性得到优化,并且薄膜的沉积速率得到一定程度的提高。采用低压低速和高压高速的沉积条件,在125℃的低温条件下制备出效率为6.7%的单结a-Si电池,高压下本征层a-Si材料的沉积速率由0.06～0.08 nm/s提高到0.17～0.19 nm/s。
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| 关 键 词： | 非晶硅(a-Si)太阳电池 低温沉积 反应气压 |
Low temperature and High deposition rate fabricating a-Si:H thin films and solar cells |
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| NI Jian.Low temperature and High deposition rate fabricating a-Si:H thin films and solar cells[J].Journal of Optoelectronics·laser,2010(2):217-221. |
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| Authors: | NI Jian |
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| Affiliation: | Institute of Photo-electronic Thin Film Devices and Technique Nankai University;Tianjin 300071;China |
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| Abstract: | A series of amorphous silicon thin films and solar cells are fabricated by RF-PECVD at deposition temperature of Ts=125 ℃.The properties of a-Si:H films are optimized through the variation of power and silane concentration under low pressure(85 Pa) and high pressure(400-667 Pa).The results show that under the high pressure conditions,the electrical and structural properties of a-Si:H films are improved at proper silane concentration and pressure/power ratio(Pg/P).At substrate temperature of Ts=125 ℃,the single junction a-Si:H solar cells with efficiency of 6.7% and high deposition rate of 0.19 nm/s are obtained. |
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| Keywords: | amorphous silicon solar cells low temperature deposition gas pressure |
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