| SiGe/Si(100)外延薄膜材料的应变表征研究 |
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| 引用本文： | 陈长春,余本海,刘江峰,曹建清,朱德彰.SiGe/Si(100)外延薄膜材料的应变表征研究[J].核技术,2005,28(4):277-281. |
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| 作者姓名： | 陈长春 余本海 刘江峰 曹建清 朱德彰 |
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| 作者单位： | 河南信阳师范学院物理电子工程学院,信阳,464000;中国科学院上海应用物理研究所核分析技术重点实验室,上海,201800 |
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| 摘 要： | 如何表征SiGe／Si异质外延薄膜中的应变对提升SiGe器件的性能至关重要。本文详细介绍了卢瑟福背散射／沟道效应(RBS／C)、高分辨率X射线衍射(HRXRD)和拉曼(Raman)谱等技术表征SiGe薄膜中应变的原理。通过这些实验技术，研究了SiGe／Si外延薄膜在氧气和惰性气体氛围下高温退火前后应变弛豫及离子注入Si衬底上外延生长的SiGe薄膜应变状态。
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| 关 键 词： | 应变 硅锗 卢瑟福背散射/沟道效应 高分辨率X射线衍射 拉曼谱 |
Investigation of strain in SiGe/Si (100) heteroepitaxial material by various characterization technology |
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| CHEN Changchun,YU Benhai,LIU Jiangfeng,CAO Jianqing,ZHU Dezhang.Investigation of strain in SiGe/Si (100) heteroepitaxial material by various characterization technology[J].Nuclear Techniques,2005,28(4):277-281. |
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| Authors: | CHEN Changchun YU Benhai LIU Jiangfeng CAO Jianqing ZHU Dezhang |
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| Affiliation: | CHEN Changchun1 YU Benhai1 LIU Jiangfeng1 CAO Jianqing2 ZHU Dezhang2 1 |
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| Abstract: | How to characterize strain stored in SiGe epilayer is very vital to performance of SiGe devices. In this article, the principles of characterizing strain by RBS/C, HRXRD and Raman spectra were thoroughly described. Utilizing these technologies, strain status of the SiGe/Si films annealed at O2 /Ar ambience and the SiGe films grown on Ar+ implanted Si substrate was verified. |
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| Keywords: | Strain SiGe RBS/C HRXRD Raman spectra |
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