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Al薄膜纳米压痕过程的多尺度模拟
引用本文:黎军顽,倪玉山,林逸汉,罗诚,江五贵.Al薄膜纳米压痕过程的多尺度模拟[J].金属学报,2009,45(2):129-136.
作者姓名:黎军顽  倪玉山  林逸汉  罗诚  江五贵
作者单位:1. 复旦大学力学与工程科学系,上海,200433
2. Faculty of Built Environment and Engineering, Queensland University of Technology, Brisbane QLD4001, Australia
摘    要:采用多尺度准连续介质法分别模拟无缺陷和具有初始缺陷两种状态下,单晶Al薄膜纳米压痕初始塑性变形过程,得到载荷-位移响应曲线和应变能-位移变化曲线.研究了初始缺陷对纳米压痕过程中位错形核与发射、Peierls应力以及位错发射.临界载荷的影响.结果表明,在整个纳米压痕过程中出现了多次位错形核与发射现象,初始缺陷对第1和第3对位错的形核与发射影响较小,而对第2对位错的形核与发射具有明显的推迟作用,并伴随有裂纹扩展现象;由于初始缺陷引起薄膜材料内部严重的晶格畸变,导致系统应变能和位错运动的Peierls应力增加;裂纹扩展前,发射第2对位错需要的临界载荷增加,裂纹失稳后,位错发射需要的临界载荷下降.模拟获得的纳米硬度和Peierls应力与实验结果吻合.

关 键 词:Al薄膜  纳米压痕  多尺度  准连续介质法  初始缺陷
收稿时间:2008-07-20
修稿时间:2008-10-30

MULTISCALE SIMULATION OF NANOINDENTATION ON Al THIN FILM
LI Junwan,NI Yushan,LIN Yihan,LUO Cheng.MULTISCALE SIMULATION OF NANOINDENTATION ON Al THIN FILM[J].Acta Metallurgica Sinica,2009,45(2):129-136.
Authors:LI Junwan  NI Yushan  LIN Yihan  LUO Cheng
Affiliation:1.Department of Mechanics and Engineering Science, Fudan University, Shanghai 200433 2.Faculty of Built Environment and Engineering, Queensland University of Technology, Brisbane QLD4001, Australia
Abstract:In order to study the early stages of plastic deformation with initial defect under the action of an indenter, the nanoindentation processes of the single crystal aluminum thin film were simulated using the quasicontinuum method. The load vs displacement response curves and strain energy vs displacement curves of the single crystal aluminum thin film with initial defect and defect--free were presented, respectively. The nanoindentation processes under influences of the initial defect were investigated about dislocation nucleation, dislocation emission, Peierls stress and load necessary for dislocation emission. The results demonstrate that the load vs displacement response curves experience many times abrupt drops with the emission of dislocations beneath the indenter. The initial defect is found to be insignificant on nucleation and emission of the 1st and 3rd dislocation dipoles, but has a distinct effect on the 2nd dislocation dipole. The nucleation and emission of the 2nd dislocation dipole is postponed obviously because of the effect of initial defect, and then crack propagation is accompanied. The strain energy of single crystal aluminum thin film and Peierls stress of dislocation dipole beneath the indenter increase with deformation processes due to the severe lattice distortion in the thin film. Before the cleavage occurs, the load necessary for the 2nd dislocation dipole nucleation and emission increases in nanoindentation with initial defect, on the contrary, it decreases after the cleavage occurred. The nanohardness and Peierls stress in this simulation show a good agreement with relevant theoretical and experimental results.
Keywords:Al film  nanoindentation  multiscale  quasicontinuum method  initial defect
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