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A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
Authors:Yifei XU  Weisheng LI  Dongxu FAN  Yi SHI  Hao QIU  Xinran WANG
Abstract:Dear editor,Two-dimensional transition metal dichalcogenide (TMD) materials, such as molybdenum disulphide (MoS2), are considered as promising channel candidat...
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