A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps |
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Authors: | Yifei XU Weisheng LI Dongxu FAN Yi SHI Hao QIU Xinran WANG |
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Abstract: | Dear editor,Two-dimensional transition metal dichalcogenide (TMD) materials, such as molybdenum disulphide (MoS2), are considered as promising channel candidat... |
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