| 光伏新材料--掺氮碳薄膜溅射制备技术及测试 |
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| 引用本文： | 丁正明,周之斌,崔容强,孙铁囤,贺振宏. 光伏新材料--掺氮碳薄膜溅射制备技术及测试[J]. 固体电子学研究与进展, 2003, 23(3): 320-322 |
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| 作者姓名： | 丁正明 周之斌 崔容强 孙铁囤 贺振宏 |
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| 作者单位： | 上海交通大学分析测试中心,上海,200030;上海交通大学物理系太阳能研究所,上海,200030 |
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| 摘 要： | 介绍了采用氮气离子束溅射 ,高纯石墨为靶材 ,沉积掺氮碳薄膜的设备及工艺技术。对薄膜的沉积过程作了讨论 ,采用 X射线光电子能谱 (XPS)技术等对薄膜结构成分、氮 -碳、碳 -碳原子之间的键以及结合能作了研究 ,在 (1 1 1 )单晶硅片上沉积掺氮碳薄膜 ,构成 C/Si异质结 ,在 1 0 0 m W/cm2 光照下 ,开路电压达 2 0 0 m V。
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| 关 键 词： | 掺氮碳薄膜 X射线光电子能谱 碳/硅异质结 |
| 文章编号： | 1000-3819(2003)03-320-03 |
| 修稿时间： | 2001-09-11 |
Synthesis Technique and XPS Test of Carbon Thin Films Doped with Nitrogen Ions |
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| DING Zhengming. Synthesis Technique and XPS Test of Carbon Thin Films Doped with Nitrogen Ions[J]. Research & Progress of Solid State Electronics, 2003, 23(3): 320-322 |
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| Authors: | DING Zhengming |
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| Abstract: | In this paper, a kind of depositing porcess, ion beam spu ttering, was introduced, which was used to form a new photovoltaic material: N d oped carbon thin films. Nitrogen was use d as sputtering gas, and a high pure gra phite sheet was served as a sputtering t arget. XPS and AFM techniques were empol yed as test probes for determining their structure and chemical bonding properti es. Si/C hetero junction has been fabric ated successfully. Its open circuit volt age reaches 200 mV, under 100 mW/cm 2 AM 1.5 illumination. |
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| Keywords: | carbon thin films doped with nitrogen X ray photo electron spe ctra(XPS) hetero junction of C/Si |
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