The formation of CuInSe2 thin films by rapid thermal processing |
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Affiliation: | Department of Physics, University of Colorado, Boulder, CO 80309 U.S.A.;Solar Energy Research Institute, 1617 Cole Boulevard, Golden, CO 80401 U.S.A. |
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Abstract: | Formation of polycrystalline thin film CuInSe2 was achieved by the rapid thermal processing of vacuum-deposited copper, indium, and selenium. Films were fabricated and characterized in three composition regions: copper-poor (approximately 20 at.% Cu). stoichiometric (25 at.% Cu) and copper-rich (approximately 28 at.% Cu). Characterization results including X-ray diffraction analysis, electron probe for microanalysis, scanning electron microscopy, and optical reflection and transmission measurements are presented. The results show that nearly single-phase material has been formed from co-deposited precursors with a post-deposition annealing time of less than 2 min. The films have smooth morphologies amenable for photovoltaic device fabrication, optical absorption coefficients in the high 104 cm−1 range, and an optical band gap of 1.0 eV. |
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