Noise performance of low power 0.25 micron gate ion implantedD-mode GaAs MESFET for wireless applications |
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| Authors: | Apostolakis PJ Middleton JR Scherrer D Feng M Lepore AN |
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| Affiliation: | Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL; |
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| Abstract: | We report on the noise performance of low power 0.25 μm gate ion implanted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 μm×200 μm D-mode MESFET has a ft of 18 GHz and fmax of 33 GHz at a power level of 1 mW (power density of 5 mW/mm). The noise characteristics at 4 GHz for the D-mode MESFET are Fmin=0.65 dB and Gassoc =13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications |
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