| Ga－Al－As－Si系统中Si的两性掺杂行为的研究 |
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| 引用本文： | 曾庆科. Ga－Al－As－Si系统中Si的两性掺杂行为的研究[J]. 功能材料, 1995, 0(3) |
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| 作者姓名： | 曾庆科 |
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| 作者单位： | 广西师范大学物理系 |
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| 摘 要： | 对Ｓｉ在电液相外延Ｇａ－Ａｌ－Ａｓ－Ｓｉ系统中的两性掺杂行为进行了研究。提出了一种恒温生长Ｇａ＿（１－ｘ）Ａｌ＿ｘＡｓ：Ｓｉｐ－ｎ结的新方法，对这种ｐ－ｎ结的成因作了定性的解释，并对这种ｐ－ｎ结的电特性加以观察。
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| 关 键 词： | 电液相外延法，转变温度，阶跃电流法，p－n结，I－V特性 |
Study on Behavior of the Amphoteric Doping of Silicon in Ga-Al-As-Si System |
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| Zeng Qingke. Study on Behavior of the Amphoteric Doping of Silicon in Ga-Al-As-Si System[J]. Journal of Functional Materials, 1995, 0(3) |
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| Authors: | Zeng Qingke |
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| Abstract: | The behavior of the amphoteric dopingof silion in the Ga-Al-As-Si system of electricalcurrent-nduced liquid phase epitaxy(CLPE)hasbeen studied.A new method for growing Ga_(1-x)Al_xAs: Si p-n junctiOn at constant temperatue in CLPEequipment has been given. The cause of formation onthis p-n junction has been explained qualitatively.The electrical property of this p-njunction has beenalso examined. |
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| Keywords: | Electrical Current-induced LiquidPhase Epitaxy (CLPE) Transition temperature Step Current p-n junction I -V Characteristic |
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