Direct Electron-Beam Patterning of Teflon AF

Teflon AF thin films have been directly patterned by electron-beam lithography without the need for chemical development. The pattern depth was found to be linearly related to exposure dose and increases with increasing film thickness. Features as small as 200 nm have been resolved. Fourier transform infrared measurements indicate that the electron-beam-induced patterning is related to degradation of the fluorinated dioxole group present in amorphous Teflon.