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Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties |
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| Authors: | P. Ressel P. H. Hao M. H. Park Z. C. Yang L. C. Wang W. Österle P. Kurpas E. Richter E. Kuphal H. L. Hartnagel |
| Affiliation: | 1. Ferdinand-Braun-Institut für H?chstfrequenztechnik, A.-Einstein-Str. 11, D-12489, Berlin, Germany 2. Texas A&M University, 77843-3128, College Station, TX, USA 6. Bundesanstalt für Materialforschung und -prüfung, Unter den Eichen 87, D-12200, Berlin, Germany 7. Ferdinand-Braun-Institut für H?chstfrequenztechnik, A.-Einstein-Str. 11, D-12489, Berlin, Germany 8. Deutsche Telekom AG, TZ, D-64295, Darmstadt, Germany 9. Technische Universit?t Darmstadt, Merckstr. 25, D-64283, Darmstadt, Germany |
| Abstract: | The development of two metallizations based on the solid-phase regrowth principle is presented, namely Pd/Sb(Zn) and Pd/Ge(Zn) on moderately doped In0.53Ga0.47As (p=4×1018 cm−3). Contact resistivities of 2–3×10−7 and 6–7×10−7 Ωcm2, respectively, have been achieved, where both systems exhibit an effective contact reaction depth of zero and a Zn diffusion depth below 50 nm. Exhibiting resistivities equivalent to the lowest values of Au-based systems in this doping range, especially Pd/Sb(Zn) contacts are superior to them concerning metallurgical stability and contact penetration. Both metallizations have been successfully applied for contacting the base layer of InP/In0.53Ga0.47As heterojunction bipolar transistors. |
| Keywords: | Ohmic contacts indium gallium arsenide InP/InGaAs heterojunction bipolar transistor solid-phase regrowth Pd/Ge contacts Pd/Sb contacts backside secondary ion mass spectrometry (SIMS) |
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