| InGaN背势垒AlGaN/GaN HEMT中的电流崩塌研究 |
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| 作者姓名： | Wan Xiaoji Wang Xiaoliang Xiao Hongling Feng Chun Jiang Lijuan Qu Shenqi Wang Zhanguo Hou Xun |
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| 作者单位： | Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices;ISCAS–XJTU Joint Laboratory of Functional Materials and Devices for Informatics |
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| 基金项目： | supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences(No.YYY-0701-02);the National Natural Science Foundation of China(Nos.60890193,61106014);the State Key Development Program for Basic Research of China(No.2010CB327503);the National Science and Technology Major Project |
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| 摘 要： | Current collapses were studied,which were observed in AlGaN/GaN high electron mobility transistors(HEMTs) with and without InGaN back barrier(BB) as a result of short-term bias stress.More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs.The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse.The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress.
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| 关 键 词： | AlGaN/GaN HEMT InGaN current collapse surface states |
| 收稿时间： | 3/4/2013 12:00:00 AM |
| 修稿时间： | 3/4/2013 12:00:00 AM |
Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors |
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| Wan Xiaoji,Wang Xiaoliang,Xiao Hongling,Feng Chun,Jiang Lijuan,Qu Shenqi,Wang Zhanguo,Hou Xun.Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J].Chinese Journal of Semiconductors,2013,34(10):104002-3. |
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| Authors: | Wan Xiaoji Wang Xiaoliang Xiao Hongling Feng Chun Jiang Lijuan Qu Shenqi Wang Zhanguo and Hou Xun |
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| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;;ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083, China |
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| Abstract: | Current collapses were studied, which were observed in AlGaN/GaN high electron mobility transistors (HEMTs) with and without InGaN back barrier (BB) as a result of short-term bias stress. More serious drain current collapses were observed in InGaN BB AlGaN/GaN HEMTs compared with the traditional HEMTs. The results indicate that the defects and surface states induced by the InGaN BB layer may enhance the current collapse. The surface states may be the primary mechanism of the origination of current collapse in AlGaN/GaN HEMTs for short-term direct current stress. |
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| Keywords: | AlGaN/GaN HEMT InGaN current collapse surface states |
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