| 一种电流复用共栅低噪声放大器的低功耗433/915-MHz射频前端的设计 |
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| 作者姓名： | Jing Yiou Lu Huaxiang |
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| 作者单位： | Institute of Semiconductors,Chinese Academy of Sciences |
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| 摘 要： | This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier(LNA),current-reuse V –I converter,active double balanced mixer and transimpedance amplifier for short range device(SRD) applications.With the proposed current-reuse LNA,the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices.The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm2.Operating in 433 MHz band,the measurement results show the RF front-end achieves a conversion gain of 29.7 dB,a double side band noise figure of 9.7 dB,an input referenced third intercept point of –24.9 dBm with only 1.44 mA power consumption from 1.8 V supply.Compared to other reported front-ends,it has an advantage in power consumption.
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| 关 键 词： | low noise amplifier mixer RF front-end short range device common-gate low power circuit |
| 收稿时间： | 3/5/2013 12:00:00 AM |
Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA |
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| Jing Yiou,Lu Huaxiang.Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA[J].Chinese Journal of Semiconductors,2013,34(10):105006-7. |
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| Authors: | Jing Yiou and Lu Huaxiang |
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| Affiliation: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | low noise amplifier mixer RF front-end short range device common-gate low power circuit |
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| Keywords: | low noise amplifier mixer RF front-end short range device common-gate low power circuit |
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