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光学薄膜损伤的单光子吸收电离的电子雪崩模型
引用本文:李丹 朱自强. 光学薄膜损伤的单光子吸收电离的电子雪崩模型[J]. 光电工程, 2000, 27(2): 52-55
作者姓名:李丹 朱自强
作者单位:中国航天工业总公司7306研究所!四川成都610100(李丹),四川大学光电科学技术系!四川成都610064(朱自强,邱服民),成都精密光学工程研究中心!四川成都610003(付雄鹰)
基金项目:中国工程物理研究院行业科技预研基金资助!( 960 2 3 0 )
摘    要:分析了实际光学薄膜与其块状材料在微观结构及宏观尺寸上的差异,指出了单光子吸收电离与雪崩倍增可分为两个相对独立的先后过程处理,提出了实际光学薄膜激光诱导损伤的单光子吸收电离引发电子雪崩模型,讨论了原初电子数密度与入射激光波长的关系,以及实际光学薄膜激光诱导损伤阈值与其原初电子数密度的关系,提出了确定原初电子数密度的实验方法。

关 键 词:光学薄膜 雪崩电离 光子吸收
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An Electron Avalanche Model of Dielectric Film Resulted from Single-Photon Absorption Ionization
LI Dan ,ZHU Zi qiang ,QIU Fu min ,FU Xiong ying. An Electron Avalanche Model of Dielectric Film Resulted from Single-Photon Absorption Ionization[J]. Opto-Electronic Engineering, 2000, 27(2): 52-55
Authors:LI Dan   ZHU Zi qiang   QIU Fu min   FU Xiong ying
Affiliation:LI Dan 1,ZHU Zi qiang 2,QIU Fu min 2,FU Xiong ying 3
Abstract:The differences between the microstructure and macro scales of a practical optical thin film and its block material are analyzed in the paper.The paper points out that single photon absorption ionization and avalanche multiplication can be divided into two relatively independent early and late processing processes.An avalanche model of laser induced damage of a practical optical thin film resulted from single photon absorption ionization is proposed.The relationship between the initial electrons density and the incident laser wavelength,and the relationship between the laser induced damage threshold for the practical optical thin film and its initial electrons density are discussed.An experimental method for determining the initial electrons density is proposed in the paper.
Keywords:Optical thin films  Laser damage  Laser induction  Avalanche ionization  Photon absorption.
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