| 氢对非晶氮化硅薄膜键合结构和光学吸收特性的影响 |
| |
| 引用本文： | 于威,孟令海,丁文革,苑静. 氢对非晶氮化硅薄膜键合结构和光学吸收特性的影响[J]. 信息记录材料, 2010, 11(1): 8-11 |
| |
| 作者姓名： | 于威 孟令海 丁文革 苑静 |
| |
| 作者单位： | 河北大学物理科学与技术学院,保定,071002 |
| |
| 摘 要： | 采用对靶磁控反应溅射技术以H2和N2为反应气体在不同氢气流量(15~25 Sccm)条件下制备了氢化非晶氮化硅(a-SiN∶H)薄膜,并利用傅立叶红外透射光谱(FTIR)和紫外-可见透射光谱(UV-VIS)对薄膜的键合结构和光学吸收特性进行了分析。结果表明,氢气流量20Sccm时薄膜中氢的键密度最大,薄膜无序度最减小;薄膜的光学带隙Eg和E04逐渐增大。薄膜原子间键合结构和薄膜有序性的变化可归因于反应溅射过程中氢气的钝化和刻蚀作用。
|
| 关 键 词： | 氢化非晶氮化硅 対靶磁控溅射 键合结构 光学吸收特性 |
Influence of Hydrogen Dilution on Optical Absorption Properties of a-SiN: H Composite Films |
| |
| YU Wei,MENG Ling-hai,DING Wen-ge,YUAN Jing. Influence of Hydrogen Dilution on Optical Absorption Properties of a-SiN: H Composite Films[J]. Information Recording Materials, 2010, 11(1): 8-11 |
| |
| Authors: | YU Wei MENG Ling-hai DING Wen-ge YUAN Jing |
| |
| Affiliation: | YU Wei,MENG Ling-hai,DING Wen-ge,YUAN Jing(College of Physics Science and Technology,Hebei University,Baoding 71002,China) |
| |
| Abstract: | Hydrogenated amorphous silicon nitride films were deposited by facing targets sputtering technique with N2 and H2 as reaction gas.Fourier-transform infrared absorption and optical transmission technique have been used to study the influence of hydrogen dilution on bonding configurations and optical absorption properties of hydrogenated amorphous silicon nitride.Results show that the film deposited at 20 Sccm hydrogen flow rate,which contains the highest bonded hydrogen content,and the lowest density of defe... |
| |
| Keywords: | hydrogenated amorphous silicon nitride facing targets sputtering bonding configurations optical absorption properties |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
