Defects characterization of Dy-doped BaTiO3 ceramics via electron paramagnetic resonance |
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| Affiliation: | 1. Research Center for Materials Science and Engineering, Jilin Institute of Chemical Technology, Jilin 132022, PR China;2. College of Chemistry, Northeast Normal University, Changchun 130024, PR China;1. Department of Mechanical and Electronic Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, China;2. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;3. School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China;1. University of Nis, Faculty of Electronic Engineering, Aleksandra Medvedeva 14, 18000 Niš, Serbia;2. Institute of Technical Sciences, SASA, Knez Mihailova 35, 11000 Belgrade, Serbia;1. School of Materials Science and Engineering, Xi’an University of Technology, Xi’an 710048, China;2. Shaanxi Province Thin Film Technology and Optical Test Open Key Laboratory, Xi’an Technological University, Xi’an 710032, China;3. Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham, Nottingham NG7 2RD, UK;4. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an 710072, China |
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| Abstract: | The point defects and the structural and dielectric properties of Dy-doped BaTiO3 ceramics prepared at 1400 °C were investigated. The solubility of Dy in the self-compensation mode was determined to be x = 0.07 for (Ba1−xDyx)(Ti1−xDyx)O3, and no EPR signals associated with the Dy3+ Kramers ion or the Ba and Ti vacancies were detected using the electron paramagnetic resonance (EPR) technique. As x increases, the dielectric behavior changed from a first-order phase transition to a diffuse phase transition to a Y7R dielectric-temperature stability. A strong EPR signal at g = 1.974, which is rare among rare-earth-doped BaTiO3 ceramics appeared unexpectedly in the single-phase (Ba1−xDyx)Ti1−x/4O3 ceramics with deliberately designed Ti vacancies. This signal was attributed to ionized Ba vacancy defects. A preference for the self-compensation mode of Dy3+ ions is responsible for the appearance of Ba vacancies. The real formula of the nominal (Ba1−xDyx)Ti1−x/4O3 is expressed as (Ba1−xDy3x/4)(Ti1−x/4Dyx/4)O3. In addition, the defect chemistry is discussed. |
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| Keywords: | Dysprosium doped barium titanate Self-compensation Electron paramagnetic resonance Ba-vacancy defects, Dielectric properties |
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