Microwave dielectric properties of low loss microwave dielectric ceramics: A0.5Ti0.5NbO4 (A = Zn,Co) |
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| Affiliation: | 1. National Engineering Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, PR China;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Jianshe Road, Chengdu 610054, PR China;1. College of Science, China University of Mining and Technology, Xuzhou 221008, China;2. School of Information and Electronics, Beijing Institute of Technology, Beijing 100081, China;1. School of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China;2. Key Laboratory for Advanced Ceramics and Machining Technology of Ministry of Education, Tianjin University, Tianjin 300072, China;1. National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, People''s Republic of China;2. Key Laboratory of Multi-Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, People''s Republic of China;3. Institute of Electronic and Information Engineering of UESTC in Guangdong, Dongguan 523808, People''s Republic of China |
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| Abstract: | The microwave dielectric properties of low-loss A0.5Ti0.5NbO4 (A = Zn, Co) ceramics prepared by the solid-state route had been investigated. The influence of various sintering conditions on microwave dielectric properties and the structure for A0.5Ti0.5NbO4 (A = Zn, Co) ceramics were discussed systematically. The Zn0.5Ti0.5NbO4 ceramic (hereafter referred to as ZTN) showed the excellent dielectric properties, with ?r = 37.4, Q × f = 194,000 (GHz), and τf = ?58 ppm/°C and Co0.5Ti0.5NbO4 ceramic (hereafter referred to as CTN) had ?r = 64, Q × f = 65,300 (GHz), and τf = 223.2 ppm/°C as sintered individually at 1100 and 1120 °C for 6 h. The dielectric constant was dependent on the ionic polarizability. The Q × f and τf are related to the packing fraction and oxygen bond valence of the compounds. Considering the extremely low dielectric loss, A0.5Ti0.5NbO4 (A = Zn and Co) ceramics could be good candidates for microwave or millimeter wave device application. |
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| Keywords: | Microwave dielectric properties Microstructure |
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