| PECVD氮化硅薄膜性质及工艺研究 |
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| 引用本文： | 李攀,张倩,夏金松,卢宏.PECVD氮化硅薄膜性质及工艺研究[J].光学仪器,2019,41(3):81-86. |
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| 作者姓名： | 李攀 张倩 夏金松 卢宏 |
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| 作者单位： | 华中科技大学武汉光电国家研究中心,湖北武汉,430074;武汉晴川学院,湖北武汉,430204 |
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| 基金项目： | 国家自然科学基金（61335002） |
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| 摘 要： | 为了制备高质量氮化硅薄膜,采用等离子体增强化学气相沉积(PECVD)进行氮化硅的气相沉积,讨论了工艺参数对薄膜性能的影响,验证设备工艺均匀性和批次间一致性。通过高低频交替生长低应力氮化硅薄膜,并检测薄膜应力,对工艺进行了优化,探索最佳的高低频切换时间。研究了PECVD氮化硅薄膜折射率、致密性、表面形貌等性质,制备出了致密的氮化硅薄膜。研究结果表明,PECVD氮化硅具有厚度偏差小、折射率稳定等特点,为其在光学等领域的应用打下了基础。
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| 关 键 词： | 半导体材料 氮化硅薄膜 等离子增强化学气相沉积(PECVD) |
| 收稿时间： | 2018/7/16 0:00:00 |
Properties and preparation of low stress SiNx film by PECVD |
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| LI Pan,ZHANG Qian,XIA Jinsong and LU Hong.Properties and preparation of low stress SiNx film by PECVD[J].Optical Instruments,2019,41(3):81-86. |
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| Authors: | LI Pan ZHANG Qian XIA Jinsong and LU Hong |
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| Affiliation: | Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China,Wuhan Qingchuan University, Wuhan 430204, China,Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China |
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| Abstract: | In this paper, silicon nitride deposition process was carried out by using plasma enhanced chemical vapor deposition (PECVD). The influence of processing parameters on PECVD film properties were discussed. In conclusion, it was convenient to obtain low stress SiNx film by controlling the switching time of high and low frequencies respectively; dense high quality SiNx films with low tensile stress can be grown. The results showed that PECVD silicon nitride had the characteristics of small thickness deviation and stable refractive index, which establishes a foundation for its application in optics. |
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| Keywords: | semiconductor material silicon nitride film plasma enhanced chemical vapor deposition |
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