| 包含双层半导体和金属纳米晶MOS电容的存储特性 |
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| 引用本文： | 倪鹤南,吴良才,宋志棠,惠春.包含双层半导体和金属纳米晶MOS电容的存储特性[J].半导体学报,2009,30(11):114003-5. |
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| 作者姓名： | 倪鹤南 吴良才 宋志棠 惠春 |
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| 作者单位： | Research Institute of Micro/Nano Science and Technology;Shanghai Jiaotong University;Shanghai Institute of Microsystem and Information Technology;Chinese Academy of Sciences;College of Life Science Biotechnology; |
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| 摘 要： | 制备了包含双层半导体和金属纳米晶的MOS电容结构，研究了其在非挥发性存储器领域的应用。利用真空电子束蒸发技术，在二氧化硅介质中得到了半导体硅纳米晶和金属镍纳米晶。与包含单层纳米晶的MOS电容相比，这种包含双层异质纳米晶的MOS电容显示出更大的存储能力，且保留性能得到改善。说明顶层的金属纳米晶作为一层额外的电荷俘获层可以通过直接隧穿机制进一步延长保留时间和提高平带电压漂移量。
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| 关 键 词： | 非挥发性存储器 纳米晶存储器 MOS 电容 |
| 收稿时间： | 12/7/2008 3:53:14 PM |
| 修稿时间： | 7/15/2009 4:06:35 PM |
Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals |
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| Ni Henan,Wu Liangcai,Song Zhitang and Hui Chun.Memory characteristics of an MOS capacitor structure with double-layer semiconductor and metal heterogeneous nanocrystals[J].Chinese Journal of Semiconductors,2009,30(11):114003-5. |
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| Authors: | Ni Henan Wu Liangcai Song Zhitang and Hui Chun |
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| Affiliation: | Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China;Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;College of Life Science Biotechnology, Shanghai Jiaotong University, Shanghai 200030, China |
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| Abstract: | An MOS (metal oxide semiconductor) capacitor structure with double-layer heterogeneous nanocrystals consisting of semiconductor and metal embedded in a gate oxide for nonvolatile memory applications has been fabricated and characterized. By combining vacuum electron-beam co-evaporated Si nanocrystals and self-assembled Ni nanocrystals in a SiO2 matrix, an MOS capacitor with double-layer heterogeneous nanocrystals can have larger charge storage capacity and improved retention characteristics compared to one with single-layer nanocrystals. The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time. |
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| Keywords: | nonvolatile memory nanocrystal memory MOS capacitor |
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