| i基区渐变掺杂SiGe/Si异质结开关功率二极管的特性模拟 |
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| 引用本文： | 祁慧,高勇,余宁梅,马丽,安涛.i基区渐变掺杂SiGe/Si异质结开关功率二极管的特性模拟[J].功能材料与器件学报,2003,9(4):437-442. |
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| 作者姓名： | 祁慧 高勇 余宁梅 马丽 安涛 |
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| 作者单位： | 西安理工大学电子工程系,西安,710048 |
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| 基金项目： | 信息产业部2001年信息产业科研试制项目(01XK610012) |
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| 摘 要： | 提出了在SiGe／Si异质结开关功率二极管的本征i区中采用掺杂浓度三层渐变式结构。由Medici模拟所得的特性曲线表明，该结构在正向I—V特性基本不发生改变的前提下，与i区固定掺杂结构相比具有更好的反向恢复电流与反向恢复电压特性，尤其软恢复特性更加明显，反向恢复过程加快。还对渐变掺杂所得到的优越性能进行了分析，从理论上给出了较好的解释。
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| 关 键 词： | SiGe／Si异质结 开关功率二极管 渐变掺杂 Medici 软恢复 PIN二极管 |
| 文章编号： | 1007-4252(2003)04-0437-06 |
| 修稿时间： | 2003年1月27日 |
Characteristics simulation and analysis of SiGe/Si hetero- junction switching power diode with gradual changing doped N-- region |
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| QI Hui,GAO Yong,YU Ning -mei,MA Li,AN Tao.Characteristics simulation and analysis of SiGe/Si hetero- junction switching power diode with gradual changing doped N-- region[J].Journal of Functional Materials and Devices,2003,9(4):437-442. |
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| Authors: | QI Hui GAO Yong YU Ning -mei MA Li AN Tao |
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| Abstract: | A novel p+ (Si1 -xGex) - n- - n+ hetero -junction power diode with gradual changing doped n- -region is proposed. The device characteristics are simulated by Medici. Results show that the fast - switching and the soft recovery characteristics ot the device are much improved than the constant structure. The ascendant characteristics are also studied theoretically. |
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| Keywords: | SiGe/Si hetero -junction PIN diode gradual changing doping Medici soft recovery |
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