| 金属氧化物IGZO薄膜晶体管的最新研究进展 |
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| 引用本文： | 刘翔,薛建设,贾勇,周伟峰,肖静,曹占峰. 金属氧化物IGZO薄膜晶体管的最新研究进展[J]. 现代显示, 2010, 0(10): 28-32 |
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| 作者姓名： | 刘翔 薛建设 贾勇 周伟峰 肖静 曹占峰 |
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| 作者单位： | 1. 京东方科技集团股份有限公司,TFT-LCD器件与材料技术研究所,北京,100176
2. 山东省泰山学院物理与电子工程学院,山东泰安,271021 |
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| 摘 要： | 最近几年,金属氧化物IGZO薄膜晶体管成为研究热点,具有高迁移率、稳定性好、制作工艺简单等优点,备受人们关注。文章综述了制作金属氧化物IGZO晶体管的结构及其优缺点,总结了影响金属氧化物IGZO薄膜晶体管性能的因素,并提出了制作高性能金属氧化物IGZO薄膜晶体管的方法。
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| 关 键 词： | 薄膜晶体管 氧化铟镓锌 氧化物 器件结构 |
The Recent Research Progress of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors |
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| LIU Xiang,XUE Jian-she,JIA Yong,ZHOU Wei-feng,XIAO Jing,CAO Zhan-feng. The Recent Research Progress of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors[J]. Advanced Display, 2010, 0(10): 28-32 |
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| Authors: | LIU Xiang XUE Jian-she JIA Yong ZHOU Wei-feng XIAO Jing CAO Zhan-feng |
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| Affiliation: | 1.TFT-LCD Device ＆ Material Technology Research Center,BOE Technology Group Co.,Ltd.,Technology Research Institute,Beijing 100176,China;2.Physics and Electronic Engineering College,Taishan University,Taian Shandong 271021,China) |
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| Abstract: | Recently,amorphous indium gallium zinc oxide thin film transistors（a-InGaZnO TFT） have attracted considerable attention for their outstanding merits,such as high mobility,good stability and simple fabrication process.This article reviews the device structure,advantages and disadvantages of a-IGZO TFT.We also summarize the impact a-IGZO TFT performance factors.In addition,the new methods of developing high performance and stability a-IGZO TFTare proposed. |
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| Keywords: | thin film transistor IGZO oxide device structure |
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