| 半导体Si(111)上电沉积NiFe缓冲层薄膜 |
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| 引用本文： | 姜莹,姚素薇,张卫国,王宏智. 半导体Si(111)上电沉积NiFe缓冲层薄膜[J]. 功能材料, 2007, 38(1): 81-84 |
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| 作者姓名： | 姜莹 姚素薇 张卫国 王宏智 |
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| 作者单位： | 天津大学,化工学院应用化学系,杉山表面技术研究室,天津,300072;天津大学,化工学院应用化学系,杉山表面技术研究室,天津,300072;天津大学,化工学院应用化学系,杉山表面技术研究室,天津,300072;天津大学,化工学院应用化学系,杉山表面技术研究室,天津,300072 |
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| 基金项目： | 国家自然科学基金 , 高等学校博士学科点专项科研项目 |
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| 摘 要： | 采用电化学沉积法,在半导体硅片上制备了具有纳米晶粒尺寸的NiFe缓冲层薄膜,并确定了获得Ni80Fe20合金的工艺条件.由SEM形貌观测分析,当薄膜名义厚度＞25 nm时,可形成连续性镀层.I-t暂态曲线及STM结果表明,NiFe薄膜在低过电位下以三维岛状模式生长,在高过电位下以二维层状模式生长,其RMS表面粗糙度最小值仅为0.5 nm.XRD结果表明,薄膜为面心立方Ni基固溶体结构,并具有明显的(111)晶面择优取向.当薄膜组成为Ni80Fe20时,各向异性磁电阻效应(AMR)最大,AMR值为1.8%.
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| 关 键 词： | 电沉积 NiFe缓冲层 纳米晶 生长模式 AMR |
| 文章编号： | 1001-9731(2007)01-0081-04 |
| 修稿时间： | 2006-06-05 |
Electrodeposition of NiFe thin films as buffer layers on semiconductor Si (111) substrates |
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| JIANG Ying,YAO Su-wei,ZHANG Wei-guo,WANG Hong-zhi. Electrodeposition of NiFe thin films as buffer layers on semiconductor Si (111) substrates[J]. Journal of Functional Materials, 2007, 38(1): 81-84 |
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| Authors: | JIANG Ying YAO Su-wei ZHANG Wei-guo WANG Hong-zhi |
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| Affiliation: | Shanshan Surface Technology Research Laboratory, Department of Applied Chemistry, Tianjin University, Tianjin 300072, China |
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| Abstract: | NiFe buffer layer thin films with nano-sized crystallites were prepared by electrodeposition on semiconductor Si(111) substrates.The electrochemical conditions for Ni_(80)Fe_(20) permalloy were determined.SEM images showed that the films were continuous with the nominal thickness over 25nm.The results of I-t transient curves and STM characterization revealed that,the growth mode of NiFe films was 3D islands type at low overpotential,and 2D layer-by-layer type at high overpotential.The minimum RMS surface roughness value was only(0.5)nm.XRD result indicated that the film,which was fcc Ni-based solid solution structure,presented an evident(111) preferred orientation.The maximum anisotropy magnetorisistance(AMR) value of 1.8% was obtained with the composition of Ni_(80)Fe_(20). |
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| Keywords: | electrodeposition NiFe buffer layer nanocrystallite growth mode AMR |
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