MBE自组织方法生长InGaAs/AlGaAs量子线FET材料

利用分子束外延 (MBE)技术在高指数面 Ga As衬底上自组织生长了应变 In Ga As/Ga As量子线材料。原子力显微镜 (AFM)观测结果表明量子线的密度高达 4× 1 0 5/cm。低温偏振光致发光谱 (PPL)研究发现其发光峰半高宽 (FWHM)最小为 9.2 me V,最大偏振度可达 0 .2 2。以 Al Ga As为垫垒 ,In Ga As/Ga As量子线为沟道 ,成功制备了量子线场效应管 (QWR-FET)结构材料 ,并试制了器件 ,获得了较好的器件结果

InGaAs/AlGaAs Quantum-wire FET Structure in Self- Organized Way by MBE

InGaAs/GaAs quantum wire (QWR) structure was grown in self organized way on a high index(553)B oriented] GaAs substrate by MBE. Surface morphologies of the In 0.15 Ga 0.85 As epitaxial layers were studied using atomic force microscope (AFM). It was revealed that the density of the QWR array was as high as 4×10 5 cm -1 . The optical characteristics of the samples were investigated by polarized photoluminescence (PPL) at low temperature(12 K). The PL peak at λ=868 nm from the (553)B QWR array showed a very small full width at half maximum (FWHM) of 9.2 meV and a large polarization anisotropy p=( I ‖- I ⊥)/( I ‖+ I ⊥)=0.22]. These results have proven that the high uniform, high density and good one dimensionality features of the In 0.15 Ga 0.85 As/GaAs quantum wires were naturally formed. The developed QWR structure has been applied to FET device fabrication with AlGaAs as the barrier layer, which performed a good DC characteristic and had a maximum transconductance of 110 mS/mm.