Measurement of silicon and GaAs/Ge solar cell device parameters |
| |
Authors: | M.P. Deshmukh J. Nagaraju |
| |
Affiliation: | Solar Energy and Thermodynamic Laboratory, Department of Instrumentation, Indian Institute of Science, Bangalore-560 012, India |
| |
Abstract: | The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I–V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature. |
| |
Keywords: | Si and GaAs/Ge solar cells Device parameters Temperature |
本文献已被 ScienceDirect 等数据库收录! |