| 低阈值大光腔半导体激光器的研制 |
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| 引用本文： | 刘文杰,王新桥,陈国鹰,李凤池,尹松岩. 低阈值大光腔半导体激光器的研制[J]. 河北工业大学学报, 1991, 0(1) |
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| 作者姓名： | 刘文杰 王新桥 陈国鹰 李凤池 尹松岩 |
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| 作者单位： | 河北工学院电气工程系，河北工学院电气工程系，河北工学院电气工程系 |
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| 摘 要： | 利用液相外延技术,研制出低阈值大光腔GaAs半导体激光器。发光波长900～910nm,阈值电流(Ith)3～5A。正常使用输出的脉冲功率为8～12W。并给出该激光器的一些电学和光学特性。
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| 关 键 词： | 液相外延 低阈值 半导体激光器 大光腔 脉冲功率 电学特性 光学特性 |
Investigation and Fabrication of Low ThresholdLarge Optical Cavity Semiconductor Lasers |
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| Liu Wenjie Wang Xinqiao Chen Guoying. Investigation and Fabrication of Low ThresholdLarge Optical Cavity Semiconductor Lasers[J]. Journal of Hebei University of Technology, 1991, 0(1) |
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| Authors: | Liu Wenjie Wang Xinqiao Chen Guoying |
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| Affiliation: | Liu Wenjie Wang Xinqiao Chen Guoying |
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| Abstract: | Low threshold large-optical-cavity (LOC) semiconductor lasers has been fabricated by LPE techniques. The emission wavelength is ranged from 9000 A to 9100 A, threshold current (Ith) from 3 to 5A, and pulse output power from 8 to 12 W in ordinary using. Some other electrical and optical characteristics are also reported. |
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| Keywords: | LPE Low threshold Semiconductor laser Large optical cavity Pulse output power Electrical characteristics Optical characteristics. |
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