Properties of structures based on laser-plasma Mn-doped GaAs and grown by MOC-hydride epitaxy |
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| Authors: | Yu. V. Vasil’eva Yu. A. Danilov Ant. A. Ershov B. N. Zvonkov E. A. Uskova A. B. Davydov B. A. Aronzon S. V. Gudenko V. V. Ryl’kov A. B. Granovsky E. A. Gan’shina N. S. Perov A. N. Vinogradov |
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| Affiliation: | (1) Nizhni Novgorod Physicotechnical Research Institute of, Nizhni Novgorod State University, pr. Gagarina 23/3, Nizhni Novgorod, 603950, Russia;(2) Russian Research Centre Kurchatov Institute, pl. Kurchatova 1, Moscow, 123182, Russia;(3) Faculty of Physics, Moscow State University, Vorob’evy gory, Moscow, 119899, Russia |
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| Abstract: | A method of doping GaAs with Mn using the laser evaporation of a metal target during MOC-hydride epitaxy is developed. The method is used to form both homogeneously doped GaAs:Mn layers and two-dimensional structures, including a δ-doped GaAs:Mn layer and a InxGa1?x As quantum well separated by a GaAs spacer with a thickness of d= 3–6 nm. It is shown that, at room temperature, the formed structures have magnetic and magnetooptical properties most probably caused by the presence of MnAs clusters. In the low-temperature region (～ 30 K), the anomalous Hall effect is observed. This effect is attributed to the exchange interaction between Mn ions via 2D-channel holes. |
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