Radiative lifetimes of electrons and holes in a thin semiconductor layer |
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Authors: | V. I. Pipa |
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Affiliation: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028, Ukraine |
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Abstract: | Radiative lifetimes of nondegenerate electrons and holes distributed uniformly in a semiconductor layer either deposited on a substrate or bounded by two dielectric media are calculated. The obtained expression takes into account the radiation reabsorbtion and interference effects and determines the dependences of the radiative lifetimes on the refractive indices of the external media and on the layer thickness. |
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