CSD法在亲水性的FTO基板上制备BiFeO3薄膜及其电性能的研究

利用化学溶液沉积法在亲水性的FTO基板上制备BiFeO3薄膜。利用XRD、FE-SEM、XPS、Agi-lent E4980A精密LCR仪及TF-Analyzer2000等分析手段对BiFeO3薄膜进行表征。结果表明,薄膜为纯相的结晶良好的多晶BiFeO3薄膜,由100～300nm的BiFeO3晶粒紧密的堆积而成,表面均匀平整。薄膜厚度为450nm。Fe的氧化态为Fe3+,并没有Fe2+出现。在10kHz时,介电常数和损耗分别为134和0.005。薄膜的剩余极化率为0.58μC/cm2,在0～250kV/cm的测试电场下漏导电流步伐保持在10-6 A/cm2以下。

Preparation and electrical properties of BiFeO3 films on FTO/glass substrate by chemical solution deposition

BiFeO3 thin films were prepared on hydrophilic FTO/glass substrate by chemical solution deposition.XRD,FE-SEM,XPS,Agilent E4980A precision LCR meter and TF-Analyzer2000 were used for the characterization of BiFeO3 thin films.The results indicated that the thin films were the well-crystallized BiFeO3 thin film with multi-crystals and pure phases.BiFeO3 crystalline grain with 100-300nm diameter were piled up and formed densely.The surface appeared even and level.The thickness of the thin film was 450nm.The oxidation state of Fe was Fe3+.There was no Fe2+ present.At 10 kHz,the dielectric constant and dielectric loss were respectively 134 and 0.005.The remanent polarizability of the thin film was 0.38μC/cm2.Under the testing electric field of 0-250kV/cm,the leakage current step remained 10-6A/cm2.