Early stages of the HFCVD process on multi-vicinal silicon surfaces studied by electron microscopy probes (SEM,TEM) |
| |
| Affiliation: | 1. Groupe Surfaces-Interfaces, Institut de Physique et Chimie de Strasbourg, IPCMS-GSI, UMR 7504, Bat 69, 23, rue du Loess, 67037 Strasbourg, France;2. Physics Department, Universita Tor Vergata, Via della Ricerca Scientifica, 00133 Rome, Italy;1. Commissariat à l''Energie Atomique, Laboratoire Surfaces et Interfaces de Matériaux Avancés associé à l''Université Paris-Sud/Orsay, DSM-DRECAM-SPCSI Bât 462, SACLAY, 91191 GIF, Sur Yvette Cedex, France;2. Laboratoire de Physique et Spectroscopie Electronique, 4, rue des Frères Lumière, 68093 Mulhouse Cedex, France;3. Thales R and T, Domaine de Corbeville, 91404 Orsay Cedex, France;1. ENEA Casaccia Research Center, via Anguillarese 301, 00060 Rome, Italy;2. ENEA Brindisi Research Center, S S. 7 Appia Km 712, 72100 Brindisi, Italy;1. Groupe d''Etudes de Métallurgie Physique et de Physique des Matériaux, UMR CNRS 5510, Bâtiment Blaise Pascal, INSA de Lyon, F-69621 Villeurbanne Cedex, France;2. Commissariat à l''Energie Atomique, Laboratoire Surfaces et Interfaces de Matériaux Avancés associé à l''Université Paris-Sud/Orsay, DSM-DRECAM-SPCSI Bât 462, Saclay, 91191 Gif sur yvette Cedex, France;3. Groupe Surfaces-Interfaces, Institut de Physique et Chimie de Strasbourg, IPCMS-GSI, UMR 7504, BP 43, 23, rue du Loess, 67034 Strasbourg Cedex 2, France;1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore;2. Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore |
| |
| Abstract: | In this paper, we show that silicon dimples are suitable samples to study diamond nucleation on a controlled distribution of defects by SEM FEG and HRTEM observations. Indeed, multi-vicinal surfaces generated by a UHV thermal treatment have been characterised by STM experiments. On these terraces, we observed a strong increase of the nucleation density higher than two orders of magnitude compared to pristine silicon samples. Moreover, a preferential location of diamond nuclei along the steps is reported. This result is explained by the large surface diffusion length of carbon species compared to the terrace's width. Indeed, during the early stages of growth, oriented silicon carbide nano-crystals are observed with the relationship SiC(220)//Si(220). |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
