Orientation control and electrical properties of sputtered Pb(Zr,Ti)O3 films |
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| Affiliation: | 1. Department of Semiconductor Science and Technology, Semiconductor Physics Research Center, Jeonbuk National University, Chonju 561-756, South Korea;2. Division of Advanced Materials Engineering, Jeonbuk National University, Chonju 561-756, South Korea;1. Departamento de Biología Celular, Biología Funcional y Antropología Física, Universitat de València, Dr. Moliner 50, Burjassot, 46100 Valencia, Spain;2. Instituto de Acuicultura Torre de la Sal (IATS-CSIC), Ribera de Cabanes, 12595 Castellón, Spain;1. LPS, CNRS, Univ Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France;2. LPTMS, CNRS, Univ Paris-Sud, Université Paris-Saclay, 91405 Orsay Cedex, France;3. Moscow Institute for Steel and Alloys, Leninskii av. 4, 119049 Moscow, Russia;1. Sobell Department of Motor Neuroscience and Movement Disorders, UCL Institute of Neurology, London, United Kingdom;2. Hospital Clínico Universitario Virgen de la Arrixaca, Neurology Department, Murcia, Spain;3. Dipartimento di Scienze Neurologiche e del Movimento, Università di Verona, Verona, Italy;4. Department of Neurology, University Medical Center Hamburg-Eppendorf (UKE), Hamburg, Germany;5. Second Dept of Neurology, Kapodistrian University of Athens, Greece;6. Neurology Clinic, Philipps University, Marburg, Germany;7. Department of Neurology, University Hospital Heidelberg, Germany;8. Department of Neurology, Kantonsspital St. Gallen, St. Gallen, Switzerland;9. Department of Biomedical and Neuromotor Sciences, Alma Mater Studiorum, University of Bologna, Bologna, Italy;1. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet Road, Hanoi 10000, Viet Nam;3. SolMateS B.V., Drienerlolaan 5, Building 6, 7522 NB Enschede, The Netherlands |
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| Abstract: | Relationship between the crystallographic orientation and the electrical properties of the Pb(Zr,Ti)O3, (PZT) thin films prepared by rf magnetron sputtering was investigated. The PZT films were deposited at 150, 250 or 340°C and, followed by rapid thermal annealing (RTA). It was found that the crystallographic orientation of the PZT films could be controlled only by the deposition temperature and the ferroelectric properties were dependent upon the orientation of the films. It was suggested that the difference in the atomic mobility at the substrate surface during deposition was closely related to the film orientation. The films with (111) orientation showed relatively high capacitance and the remanant polarization values. |
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