Patterned growth and field emission properties of vertically aligned carbon nanotubes |
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| Affiliation: | 1. Department of Semiconductor Science and Technology, and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 561-756, South Korea;2. Department of Physics, Jeonbuk National University, Jeonju 561-756, South Korea;3. Division of Advanced Materials Engineering, Jeonbuk National University, Jeonju 561-756, South Korea;1. Department of Physics, GLA University, Mathura, UP, India;2. Department of Mechanical Engineering, GLA University, Mathura, UP, India;1. Department of Communication Engineering, Okayama Prefectural University, 111 Kuboki, Soja, Okayama 719-1197, Japan;2. Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, Gent B-9000, Belgium;1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejeon 305-701, Republic of Korea;3. WISE CONTROL Inc., R&D Division 199, Sanggal-dong, Giheung-gu, Youngin-si, Gyeonggi-do 446-905, Republic of Korea;4. Korea Institute of Science and Technology, Eunhari san 101, Wanju-gun, Jeonbuk 565-905, Republic of Korea;1. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;2. Department of Mechanical Engineering, University of Michigan, Ann Arbor, MI 48109, USA;3. Department of Electrical Engineering, University of Michigan, Ann Arbor, MI 48109, USA;4. Department of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, Seoul 01811, South Korea;5. Department of Electrical and Computer Engineering, Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea;6. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA;7. School of Mechanical Engineering, Yonsei University, Seoul 03722, South Korea;8. School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, South Korea;1. Display Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, People''s Republic of China;2. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210096, People''s Republic of China |
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| Abstract: | Vertically aligned carbon nanotubes were grown selectively on patterned Ni thin films by microwave plasma-enhanced chemical vapor deposition and their field emission properties were investigated using a diode-structure. Ni thin films patterned with a form of dot-arrays were prepared using a shadow mask having an array of holes. The nanotubes were found to be well-graphitized with multiwalled structures. The measurements of field emission properties revealed that the carbon nanotube tips emitted high current density at low macroscopic electric field. The Fowler–Nordheim (F–N) plot clearly showed two characteristic regions where the current saturates at the high electric field region. It was found that the saturation behavior was caused by the adsorbates-enhanced field emission mechanism. Eliminating the adsorbates resulted in no saturation behavior, increasing turn-on field, decreasing current, and increasing field enhancement factor. Using ZnS/Cu,Al phosphor, very bright and uniform emission patterns were obtained. |
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