Analysis of piezoresistive properties of CVD-diamond films on silicon |
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| Affiliation: | 1. University of Ulm, Department of Electron Devices and Circuits, Albert-Einstein-Allee 45, D-89081 Ulm, Germany;2. GFDmbH Ulm, Wilhelm-Runge-Str. 11, D-89081 Ulm, Germany;3. University of Ulm, Department of Semiconductor Physics, Albert-Einstein-Allee 45, 89081 Ulm, Germany;1. The State Key Laboratory for New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;2. High-Tech Institute of Beijing, Beijing 100094,China;3. The Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Collaborative Innovation Center of Advanced Nuclear Energy Technology, Tsinghua University, Beijing 100084, China;4. Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang Sichuan 621907, China;1. School of Mechanical Engineering, University of South China, Hengyang, 421001, China;2. National Electricity Investment Group Central Research Institute, Beijing 102209, China |
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| Abstract: | The piezoresistive properties of CVD-diamond are still very much in discussion since not only the materials energy band structure properties have to be considered but also the grain boundaries and internal stress distribution. Here, the experimental piezoresistive properties of CVD-diamond-on-silicon layers for free standing structures have been investigated comprehensively. The longitudinal gauge factor kl has been extracted using freestanding diamond cantilevers on silicon. The piezoresistors have been grown selectively onto the surface of diamond cantilevers near the mechanical suspension and doped with boron (acceptor). The electrical contacts are based on the tunneling mechanism with a silicon-based multilayer metalization leading to a linear IV-characteristic. Gauge factor values, kl, have been extracted on various structures with different doping concentrations and diamond film quality (highly oriented and textured, textured, randomly oriented), depending on temperature (room temperature, −350°C) and intrinsic stress. Highly oriented and textured films with grain sizes between 3 and 10 μm have been used to realize ‘single grain’ resistor structures enabling the investigation of grain boundaries in the electrical current path of the piezoresistor. Raman measurements have been performed to measure the intrinsic stress in the diamond grains. Gauge factors, kl of between 4 and 28 have been extracted. Largest kl values were observed on piezoresistors on highly oriented and textured diamond (HOD) films. Results of this work have been used in piezoresistive sensor applications. |
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