Preparation of nitrogen-rich CNx films with inductively coupled plasma CVD and pulsed laser deposition |
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| Affiliation: | 1. Department of Industrial Chemistry, Université Libre de Bruxelles, 50 av. F.D. Roosevelt, B-1050 Brussels, Belgium;2. Institute of Physics, Academy of Science of the Czech Republic, Na Slovance 2, 18040 Prague 8, Czech Republic;3. Institute of Technical Physics, University of Kassel, Heinrich- Plett-Strasse 40, D-34109 Kassel, Germany;1. Institute of Physics ASCR, Cukrovarnicka 10, 16200 Prague 6, Czech Republic;2. Research Center for Photovoltaics v, AIST, Tsukuba 305-8568, Japan;3. Faculty of Electrical Engineering, Czech Technical University, Technicka 2, 16627 Prague, Czech Republic;1. Institute of Polymer Science and Engineering, School of Chemical Engineering and Technology, Hebei University of Technology, Tianjin, 300130, China;2. National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, 305-0047, Japan;3. Key Lab for Micro- and Nano-scale Boron Nitride Materials in Hebei Province, Hebei University of Technology, Tianjin, 300130, China |
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| Abstract: | Nitrogen-rich amorphous carbon nitride films with N/(N+C)≥0.5 have been deposited with three different methods, namely: (i) inductively coupled plasma CVD utilizing chemical transport reactions (ICP–CTR); (ii) inductively coupled plasma CVD with gaseous precursors (ICP–GP) and (iii) pulsed laser deposition (PLD) with additional r.f. plasma discharge. By means of plasma diagnostic measurements it is shown that in each case high concentrations of active radical species (e.g. CN and N) are necessary to obtain high nitrogen concentrations. On the other hand, these nitrogen-rich films turned out to be mainly sp2 bonded having rather low densities of 1.8–2.0 g cm−3 only, irrespective of the method. From a comparison of the three techniques, and of further literature data, conclusions are drawn regarding the conditions necessary to obtain high N/(N+C) ratios, and regarding the deposition of superhard, crystalline sp3 bonded carbon nitride modifications. |
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