| 半绝缘砷化镓的PL谱及其质量表征 |
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| 引用本文： | 张荣桂,李安平. 半绝缘砷化镓的PL谱及其质量表征[J]. 微纳电子技术, 1993, 0(3) |
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| 作者姓名： | 张荣桂 李安平 |
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| 作者单位： | 机电部第13研究所，机电部第13研究所 石家庄 050051，石家庄 050051 |
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| 摘 要： | 对多批不同束源的LEC SI-GaAs进行了15K及变温、变激发光强的光致发光PL测量,并对不同PL峰值能量下PL强度随样品位置的变化进行了一维线性扫描和二维空间扫描。对三个能谱区的分析和讨论表明,PL测量可作为高性能微波GaAs FET及GaAs IC用衬底的无损评价方法。
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| 关 键 词： | 半绝缘砷化镓 杂质和缺陷 光致发光 |
Photoluminescence Spectra and Quality Characterization of SI-GaAs |
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| Zhang Ronggui,Li Anping. Photoluminescence Spectra and Quality Characterization of SI-GaAs[J]. Micronanoelectronic Technology, 1993, 0(3) |
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| Authors: | Zhang Ronggui Li Anping |
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| Abstract: | Photoluminescence (PL) measurements were performed at 15K and variable temperature and excitation intensities for a number of LEC SI-GaAs wafers grown in different institutes or companies. Specially scanned PL were also studied. From the results of the PL spectra measured, we suggest PL measurement as a nondestructive inspection method for SI-GaAs substrates can be used in high performance microwave FET and GaAs ICs. |
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| Keywords: | Si-GaAs. Impurity and defect photoluminescence |
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