Co3O4 thin film prepared by a chemical bath deposition for electrochemical capacitors

Co₃O₄ thin film is synthesized on ITO by a chemical bath deposition. The prepared Co₃O₄ thin film is characterized by X-ray diffraction, and scanning electron microscopy. Electrochemical capacitive behavior of synthesized Co₃O₄ thin film is investigated by cyclic voltammetry, constant current charge/discharge and electrochemical impedance spectroscopy. Scanning electron microscopy images show that Co₃O₄ thin film is composed of spherical-like coarse particles, together with some pores among particles. Electrochemical studies reveal that capacitive characteristic of Co₃O₄ thin film mainly results from pseudocapacitance. Co₃O₄ thin film exhibits a maximum specific capacitance of 227 F g⁻¹ at the specific current of 0.2 A g⁻¹. The specific capacitance reduces to 152 F g⁻¹ when the specific current increases to 1.4 A g⁻¹. The specific capacitance retention ratio is 67% at the specific current range from 0.2 to 1.4 A g⁻¹.