p-Type and n-type Cu2O semiconductor thin films: Controllable preparation by simple solvothermal method and photoelectrochemical properties |
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| Authors: | Liangbin Xiong Sheng Huang Xi Yang Mingqiang Qiu Zhenghua Chen Ying Yu |
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| Affiliation: | aInstitute of Nanoscience and Nanotechnology, Huazhong Normal University, Wuhan 430079, China;bDepartment of Physics, Huanggang Normal University, Huanggang 438000, China;cCollege of Chemistry, Huazhong Normal University, Wuhan 430079, China;dNational Engineering Research Center for Renewable Energy, Beijing 100083, China |
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| Abstract: | p-Type and n-type Cu2O thin films were controllably prepared using a simple solvothermal method by adjusting pH value of the copper (II) acetate aqueous solution. Photoelectrochemical experiments show that the Cu2O thin films synthesized in acid and alkaline (or neutral) media present n-type and p-type semiconductor character, respectively. Moreover, the films prepared at pH 5 have the best photoelectrochemical properties. The mechanism for the formation of these p-type and n-type Cu2O films is discussed. The Cu2O p–n homojunction fabricated in this study shows typical p–n junction character. This facile preparation method may be a promising way to prepare p–n homojunctions for semiconductor devices. |
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| Keywords: | p-Type Cu2O n-Type Cu2O Homojunction Photoelectrochemical property |
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