Fabrication and characterization of sub-quarter-micron MOSFETs witha copper gate electrode |
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Authors: | Ma Y. Evans D.R. Nguyen T. Ono Y. Hsu S.T. |
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Affiliation: | Sharp Labs. of America, Camas, WA; |
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Abstract: | Sub-0.25-μm P- and N-MOSFETs with a chemical vapor deposited copper gate electrode were fabricated using a novel nitride cast method wherein a silicon nitride gate is used as a stand-in gate which is then replaced by Cu with a PVD TiN barrier metal after source/drain formation. The maximum processing temperature after copper deposition is 400°C. Excellent device performance was obtained on both P- and N-MOSFET. No signs of copper diffusion were observed after device fabrication and after bias-temperature stress tests at 200°C |
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