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Structural investigation of Ge-Sb-Sn thin films using transmission electron microscopy
Authors:M.?Naito  author-information"  >  author-information__contact u-icon-before"  >  mailto:naito@sanken.osaka-u.ac.jp"   title="  naito@sanken.osaka-u.ac.jp"   itemprop="  email"   data-track="  click"   data-track-action="  Email author"   data-track-label="  "  >Email author,M.?Ishimaru,Y.?Hirotsu,M.?Takashima,H.?Matsumoto
Affiliation:(1) The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki Osaka, 567-0047, Japan;(2) Science and Technology Research Center, Inc., Mitsubishi Chemical Group, Kamoshida-cho, Aoba-ku, Yokohama Kanagawa, 227-8502, Japan
Abstract:Atomistic structures of as-deposited and laser-induced-crystallized Ge-Sb-Sn layers have been examined using high-resolution electron microscopy (HREM) and nanobeam electron diffraction (NBED). Cross-sectional observations were performed on Ge-Sb-Sn thin films embedded in a multi-layered structure. Crystalline clusters were frequently observed in the HREM images of the as-deposited amorphous Ge-Sb-Sn thin film. Autocorrelation function analysis of the HREM image indicated a similarity between the structures of the crystalline clusters and that of rhombohedral Sb. Atomic pair-distribution functions obtained from the halo NBED intensity of the as-deposited amorphous Ge-Sb-Sn films also showed development of local structure whose atomic configuration is similar to that of the rhombohedral Sb. NBED revealed that the structure of the crystallized Ge-Sb-Sn thin film is also close to that of rhombohedral Sb. The atomistic structures of Ge-Sb-Sn thin films were compared with those of Ge-Sb-Te thin films and the rapid crystallization mechanism of these materials was discussed.
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