Crystalline structure of germanium films on silicon substrates: I. Investigation of the perfection of germanium heteroepitaxial films on silicon by X-ray diffraction methods

The purpose of this paper is to describe an investigation of the structural perfection of heteroepitaxial Ge films on silicon by different X-ray diffraction methods. Quantitative information about the degree of structural perfection of the films has been obtained by X-ray intensity jumps measured near the K-edge absorption of germanium and by rocking curves. Structural damage in the films and substrates has been studied by X-ray topographical methods. The possibility of obtaining independent film and substrate topograms has been shown. Elastic strains arising during the film growth lead to film and substrate fragmentation. Films and substrates have the same configuration and sizes of fragments. A new X-ray method for the heteroepitaxial films thickness measurement has been proposed.