Capacitance voltage measurements on n-type InAs MOS diodes |
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| Authors: | R.J. Schwartz R.C. Dockerty H.W. Thompson Jr. |
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| Affiliation: | 1. School of Electrical Engineering, Purdue University, Lafayette, Indiana 47907, USA |
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| Abstract: | The electrical properties of the interface between pyrolytically deposited SiO2 and InAs have been investigated by measuring the admittance of Al-SiO2-InAs MOS diodes at room temperature and 77°K. The room temperature measurements yield a rather high surface state density of 2·5 × 1012 states/eV/cm2. The surface state density undergoes an anomalous decrease to 2·8 × 1011 states/eV/cm2 at 77°K. A charge which is linearly dependent on the voltage across the oxide is trapped in the oxide. Conduction through the oxide causes the diodes to enter a deep depletion condition at 77°K. |
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