| 共振隧穿二极管的设计、研制和特性分析 |
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| 引用本文： | 张磊,杨瑞霞,武一宾,商耀辉,高金环.共振隧穿二极管的设计、研制和特性分析[J].半导体学报,2007,28(5):737-740. |
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| 作者姓名： | 张磊 杨瑞霞 武一宾 商耀辉 高金环 |
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| 作者单位： | 河北工业大学，天津 300130;河北工业大学，天津 300130;中国电子科技集团公司第十三研究所，石家庄 050051;中国电子科技集团公司第十三研究所，石家庄 050051;河北工业大学，天津 300130 |
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| 摘 要： | 用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.经过材料生长设计和工艺的改进,测得室温下器件的最高PVCR为2.4,峰值电流密度达到36.8kA/cm2.进行直流参数测试,得到RTD的I-V特性曲线,对量子阱宽度和帽层厚度对I-V特性的影响进行了分析.
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| 关 键 词： | 共振隧穿二极管 I-V特性曲线 峰谷电流比 负微分电阻 |
| 文章编号： | 0253-4177(2007)05-0737-04 |
| 修稿时间： | 10 11 2006 12:00AM |
Design,Fabrication,and Analysis of a Resonant Tunneling Diode |
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| Zhang Lei,Yang Ruixi,Wu Yibin,Shang Yaohui and Gao Jinhuan.Design,Fabrication,and Analysis of a Resonant Tunneling Diode[J].Chinese Journal of Semiconductors,2007,28(5):737-740. |
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| Authors: | Zhang Lei Yang Ruixi Wu Yibin Shang Yaohui and Gao Jinhuan |
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| Affiliation: | HeiBei University of Technology,Tianjin 300130,China;HeiBei University of Technology,Tianjin 300130,China;The 13th Research Institute,China Electronics Technology Group Corporation, Shijiazhuang 050051,China;The 13th Research Institute,China Electronics Technology Group Corporation, Shijiazhuang 050051,China;HeiBei University of Technology,Tianjin 300130,China |
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| Abstract: | AlAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy.By improving on material growth design and process design,the maximum PVCR of the RTD has reached 2.4,and the density of the peak current has reached 36.8kA/cm2.The parameters and I-V characteristics of the RTD have been measured,and the effects of quantum well width and thickness of the cap layer on the RTD I-V characteristics are analyzed. |
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| Keywords: | resonant tunneling diode I-V characteristics peak to valley current ratio negative differential resistance |
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