用碳饱和硅熔体制备的3C—SiC薄片及其光致发光

将硅置于高纯石墨坩埚中使其在高温条件下熔化，坩埚壁石自在熔解于硅熔体中成碳饱和的硅熔体，在石墨形形成SiC多晶薄层并通过改变工艺条件使薄层变厚形成厚约0.5mm的SiC多晶薄片，X射线衍射（XRD），Raman散射等分析表明所制备样品为3C－SiC多晶体，采用He-Cd激光325mm线在不同温度下对实现样品进行了光致发光（PL）测试分析，PL实验结果表明随着温度的变化，PL发光中心发生蓝移，其中心由2.13eV移至2.39eV.

3C-SiC lamella prepared from the Si solvent saturated by carbon and its photoluminescence

The Si wafer as the starting material is melted and becomes a solvent saturated by carbon from the inner wall of high pure graphite crucible heating by inductive coils. The polycrystalline SiC lamella with 0 5 mm in thickness is prepared in the underside. It is characterized by XRD, Raman Spectra, etc. The results reveal that the sample is 3C-SiC polycrystalline. Photoluminescence spectra are measured at the temperatures ranging from 11 K to 293 K by using a 325 nm from a He-Cd laser. Under incident light irradiating on the sample, it can be clearly seen that visible light is illuminating. It is apparent that the peak at the photon energy is 2.13 eV, and blue shifts to 2.39 eV with the temperatures ranging from 11 K to 293 K.