| 与CMOS兼容的硅基波导型光电探测器的研究 |
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| 引用本文： | 曾凡平,韩培德,高利朋,冉启江,毛雪,赵春华,米艳红.与CMOS兼容的硅基波导型光电探测器的研究[J].光通信技术,2009,33(5). |
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| 作者姓名： | 曾凡平 韩培德 高利朋 冉启江 毛雪 赵春华 米艳红 |
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| 作者单位： | 中国科学院,半导体研究所,集成光电子国家重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金，国家自然科学基金重点项目，国家重点基础研究发展规划(973计划) |
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| 摘 要： | 硅基波导型光电探测器作为一类重要的光电探测器,由于其能与标准的CMOS工艺兼容以及制备工艺简单等性能,因而在光电子单片集成方面具备广阔的市场应用前景.文章着重阐述了通过离子注入引入深能级、Ge/Si自组装岛、SOI波导共振腔增强和AlGaInAs-Si混合集成等四种方式来制备硅基光电探测器的研究现状和研究进展,并对四类器件的结构,制作工艺和光电性能指标进行了详细地介绍.
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| 关 键 词： | 硅基光电探测器 深能级缺陷 Si/Ge自组装 |
research in CMOS-compatible silicon-based photodetector |
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| ZENG Fan-ping,HAN Pei-de,GAO Li-peng,RAN Qi-jiang,MAO Xue,ZHAO Chun-hua,MI Yan-hong.research in CMOS-compatible silicon-based photodetector[J].Optical Communication Technology,2009,33(5). |
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| Authors: | ZENG Fan-ping HAN Pei-de GAO Li-peng RAN Qi-jiang MAO Xue ZHAO Chun-hua MI Yan-hong |
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| Affiliation: | ZENG Fan-ping,HAN Pei-de,GAO Li-peng,RAN Qi-jiang,MAO Xue,ZHAO Chun-hua MI Yan-hong(State-key laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | As a important type of photodetector,silicon-based photodetector has great market application po-tential due to cmos-compatible performance and simple fabrication process.This field is greatly emphasized by many international research institutions.This paper will introduce the development of silicon photodector that are fabricated by self ion implantation,.Ge/Si self-assembled islands,RCE,hybrid AlGaInAs-Si,and will discuss the device structure,fabrication process and photo-electronic performance. |
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| Keywords: | silicon-based photodetetor deep-level defect Si/Ge self-assembled island |
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