氧离子束流密度对Ta2O5薄膜的影响

利用氧离子辅助电子束蒸发沉积Ta2O5薄膜,在dd定氧离子能量的条件下研究了氧离子束流密度对Ta2O5薄膜的微观结构、化学计量比和漏电流密度的影响.利用原子力显微镜和X射线衍射仪对Ta2O5薄膜微观结构进行表征研究,发现随着离子束流密度增大,沉积的Ta2O5薄膜致密性提高,粗糙度下降,但薄膜一直保持非晶态;同时能谱仪测试的结果表明,薄膜中O/Ta比例逐渐提高,直至呈现富氧状态.测量了不同薄膜样品的漏电流密度和击穿场强,发现随着离子束流密度增大,薄膜漏电流密度显著降低,击穿场强提高.总之,提高氧离子束流密度能够明显改善Ta2O5薄膜的微观结构和电学性能.

Effect of oxygen ion beam density on deposition of Ta2O5 films

Ta2O5 thin films were deposited on floating plane glass by electron beem evaporation assisted with oxygen ion beam.The effects of oxygen ion beam density on the microstructure,stoichiometric ratio and leakage current density of Ta2O5 films were studied under conditions that the oxygen ion energy was constant.The Ta2O5 films were characterized by AFM,XRD and EDS,and the results indicated that with the increasing oxygen ion beam density,the films become denser and smoother and are kept in amorphous state.The energy specturm showed that the value of O/Ta atomic ratio in the films imcreases gradually and,eventually,the films come into oxygen-rich state.With the leakage current density and breakdown field strength of the different film samples measured,it was found that the leakage current density decreases obviously and the breakdown field strength increases with increasing oxygen ion beam density.In conclusion,increasing the oxygen ion beam density can improve clearly the microstructure and electric properties of Ta2O5 films.