单电子晶体管及其SPM加工方法

在电子技术领域,高度集成化是人们不断追求的目标,纳米电子器件迎合了人们的这种需要,将逐步取代微电子器件成为芯片的主要单元。单电子器件以其高效、高功能、高速、低耗(可在常温下工作)、高集成化及经济可靠等优点受到了人们的广泛重视。纳米电子器件具有纳米量级,因而许多科研人员都致力于寻求一种良好的加工方法。SPM电场诱导氧化方法以其简单性和低成本越来越受到人们的广泛重视。主要介绍了单电子晶体管(SET)的结构及基本原理,着重介绍了大气状态下用SPM电场诱导氧化加工的制作原理。

Single-electron transistor and its fabrication based on SPM

In the field of electronics,high integration is the goal that human is pursuing.Nano-electronic devices cater for the requirement ,which gradually become the key units of chips in place of micro-electronic devices.Single-electron devices get more and more attention due to their high efficiency,good performance,high speed,low wastage(working in room temperature),high integration,reliability and so on.Nano-electronic devices own nanometer scale,so many re-searchers devote themselves to seeking for an excellent nanofabrication approach.Field-induced ox-idation process of SPM has attracted extensive interest of people because of its simplicity and low cost.In this paper,the structure and running principle of SET are introduced.Particularly,the fabrication principle based on SPM field-induced oxidation in air is presented.