Excellent compositional homogeneity in In0.3Ga0.7As crystals grown by the traveling liquiduszone (TLZ) method |
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| Authors: | Kyoichi Kinoshita Yasuyuki Ogata Satoshi Adachi Naokiyo Koshikawa Shinichi Yoda |
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| Affiliation: | 1. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan
2. Office of Space Flight and Operations, Japan Aerospace Exploration Agency, Tsukuba, Ibaraki, Japan
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| Abstract: | The influence of convection in a melt on the compositional homogeneity of the TLZ-grown In0.3Ga0.7As crystals has been investigated by growing crystals with various dimensions on the ground. Excellent compositional homogeneity such as 0.3 plus or minus 0.01 in InAs mole fraction for a distance of 25 mm was obtained when the melt diameter was limited to 2 mm and convective flow in the melt was suppressed. On the other hand, when the crystal diameter was increased to 10 mm, both axial and radial compositional homogeneity was deteriorated due to convection in the melt. Comparing with the numerical simulation, convective flow velocity less than 1.4 mm/h may be sufficient for growing homogeneous crystals and it is not so difficult to suppress convective flow velocity below 1.4 mm/h for 10 mm diameter crystals in microgravity. Therefore, larger homogeneous In0.3Ga0.7As crystals are expected to be grown by the TLZ method on board the International Space Station. |
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