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Effect of gravity on InGaSb crystal growth |
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| Authors: | Noriaki Murakami Koji Arafune Tadanobu Koyama Yoshimi Momose Tetsuo Ozawa Yasunori Okano Sadik Dost Le. H. Dao Masashi Kumagawa Yasuhiro Hayakawa |
| Affiliation: | 1. Research Institute of Electronics, Shizuoka University, Hamamatsu, Shizuoka, Japan 2. Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka, Japan 3. Faculty of Engineering, Shizuoka University, Hamamatsu, Shizuoka, Japan 4. Dept. of Mech. Eng., University of Victoria, Victoria, BC, Canada 5. Adv. Mat. Res. Lab., Univ. du Quebec, INRS, Verennes, Qubec, Canada |
| Abstract: | The effect of gravity on dissolution of GaSb in InSb melt and growth of InGaSb was experimentally investigated. Experiments were carried out in a GaSb(seed)/InSb/GaSb(feed) sandwich system under an imposed temperature gradient. In the experiments, the GaSb feed crystal dissolved into the InSb melt to supply the required GaSb component for the growth of In0.1Ga0.9Sb crystal. Two parameters were considered: (1) the inclination angle (θ) of the sample for gravity as 0° and 53°, and (2) the sample diameter (D) as 9 mm and 5mm. When θ was 0°, the interface was almost flat, indicating that convection was axisymmetric and stable. Whereas the interface was distorted towards gravitational direction when θ was 53°, indicating that solutal convection was dominant. The decrease of growth temperature and sample diameter reduced the distortion of interface and the dissolution amount of GaSb feed. The homogeneous crystals were grown at the initial growth stage by supplying the GaSb component during growth. |
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