Second breakdown of IC structured power transistors |
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Abstract: | The authors attempt to characterize second breakdown as heating phenomena which can occur in one of two places, either at the p-n interface at low current or at the n-n+interface at higher current. The transition point between these two states occurs at a current It= qVsatNDS where the n-region field is uniform and at a voltage Vt= εsatWepijust necessary to saturate the drift velocity in Wepi. |
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