| GaN基蓝光器件的研究进展 |
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| 引用本文： | 沈波 李熹霖. GaN基蓝光器件的研究进展[J]. 光电子技术, 1996, 16(4): 286-292 |
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| 作者姓名： | 沈波 李熹霖 |
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| 作者单位： | [1]南京大学物理系 [2]南京洛普实业有限公司 |
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| 摘 要： | 本文对近几年ＧａＮ基蓝光器件，包括ＧａＮ基发光二极管和激光二极管的发展历程进行了全面介绍和评价。指出ＧａＮ基蓝光ＬＥＤ的研究开发技术将在１－２年内走向成熟，从而实现大规模商业化生产，而ＧａＮ基蓝光ＬＤ也将在近二年内实用化。
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| 关 键 词： | 氮化镓 发光二极管 激光二极管 发光器件 |
Developments in the Study of GaN-Based Blue Light Devices |
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| Zheng Youdou,Shen Bo,Shi Hongtao,ZhangRong,Yang Kai,Chen Peng. Developments in the Study of GaN-Based Blue Light Devices[J]. Optoelectronic Technology, 1996, 16(4): 286-292 |
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| Authors: | Zheng Youdou Shen Bo Shi Hongtao ZhangRong Yang Kai Chen Peng |
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| Abstract: | Recent developments in the study of GaN-based blue-green light emittingdiodes(LEDs)and blue light laser diodes(LDs)are reviewed- It is pointed out that the commercial fabrication of the LEDs on a large scale will be realized within one or two years,and theLDs will also appear in the market within two or three years. |
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| Keywords: | gallium nitride (GaN) light emitting diode(LED) laser diode(LD) |
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