| 掺铒硫化锌交流电致发光薄膜的表面结构 |
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| 引用本文： | 柳兆洪,王余姜,陈谋智,孙书农,刘瑞堂. 掺铒硫化锌交流电致发光薄膜的表面结构[J]. 半导体光电, 1999, 20(2): 3 |
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| 作者姓名： | 柳兆洪 王余姜 陈谋智 孙书农 刘瑞堂 |
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| 作者单位： | 厦门大学,厦门,361005 |
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| 摘 要： | 对研制的掺铒硫化锌交流电致发光薄膜，进行了表面的 Ｘ 射线衍射（ Ｘ Ｒ Ｄ） 、 Ｘ 射线光电子能谱（ Ｘ Ｐ Ｓ） 及发光亮度测量。研究认为薄膜多晶的沉积有择优取向的趋势，表层碳、氧主要来源于吸附与玷污，绝缘层选择高介电常数、低电阻率的材料，可进一步提高器件质量
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| 关 键 词： | 半导体材料 掺铒硫化锌 交流电致发光 薄膜 介电常数 表面吸附 |
Surface structure of ZnS:Er3+ ACEL thin films |
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| LIU Zhaohong,WANG Yujiang,CHEN Mouzhi,SUN Shunong,LIU Reitang. Surface structure of ZnS:Er3+ ACEL thin films[J]. Semiconductor Optoelectronics, 1999, 20(2): 3 |
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| Authors: | LIU Zhaohong WANG Yujiang CHEN Mouzhi SUN Shunong LIU Reitang |
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| Abstract: | Measurements of X-ray diffraction(XRD),X-ray photoelectron spectroscopy (XPS) and luminescence brightness are made for alternating current electroluminescent (ACEL) zinc sulfide thin film doped with erbium.The results show that the depositing polycrystalline films have a trend of preferred orientation, contamination are the main source of the occurrence of layers carbon and oxygen in the surface layer of the By using insulator layer with higher dielectric constant and lower resistivity, the quality of alternating current electroluminescen devices can be improved |
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| Keywords: | Semiconductor Materials ZnS:Er~3+ Alternating Current Electroluminescence Thin Film Dielectric Constant Surface Adsorption |
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